? 2005 ixys all rights reserved g = gate c = collector e = emitter tab = collector symbol test conditions maximum ratings v ces t j = 25 c to 150 c 600 v v cgr t j = 25 c to 150 c; r ge = 1 m ? 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c40a i c110 t c = 110 c16a i f110 t c = 110 c (ixg_16n60b2d1 diode) 11 a i cm t c = 25 c, 1 ms 100 a ssoa v ge = 15 v, t j = 125 c, r g = 22 ? i cm = 32 a (rbsoa) clamped inductive load @0.8 v ces p c t c = 25 c 150 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c m d mounting torque 1.13/10 nm/lb.in. maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s weight 6 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v ge(th) i c = 250 a, v ce = v ge 2.5 5.0 v i ces v ce = v ces 50 a v ge = 0 v t j =125 c1 ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = 12a , v ge = 15 v 2. 3 v note 2 t j =125 c 1.8 v features z international standard packages z igbt and anti-parallel fred for resonant power supplies - induction heating - rice cookers z mos gate turn-on - drive simplicity z fast recovery expitaxial diode (fred) - soft recovery with low i rm advantages z saves space (two devices in one package) z easy to mount with 1 screw z reduces assembly time and cost ds99178a(12/05) hiperfast tm igbt b2-class high speed igbt ixgh 16n60b2d1 v ces = 600 v i c25 =40a v ce(sat) = 2.0 v t fi(typ) =80ns advance technical information g c e to-247 (ixgh)
ixys reserves the right to change limits, test conditions, and dimensions. ixgh 16n60b2d1 reverse diode (fred) characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. v f i f = 10 a, v ge = 0 v 2.66 v t j = 125 c 1.66 v i rm i f = 12 a; -di f /dt = 100 a/ s, v r = 100 v 2.5 a t rr v ge = 0 v; t j = 125 c 110 ns t rr i f = 1 a; -di f /dt = 100 a/ s; v r = 30 v, v ge = 0 v 30 n s r thjc 2.5 k/w symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = 12a; v ce = 10 v, 8 12 s note 2. c ies v ce = 25 v, v ge = 0 v, f = 1 mhz 780 pf c oes 65 pf c res 19 pf q g i c = 20a, v ge = 15 v, v ce = 0.5 v ces 32 nc q ge 6nc q gc 10 nc t d(on) 25 ns t ri 15 ns t d(off) 70 150 ns t fi 80 150 ns e off 150 260 j t d(on) 25 ns t ri 18 ns e on 700 j t d(off) 110 ns t fi 170 ns e off 350 j r thjc 0.83 k/w r thck 0.25 k/w inductive load, t j = 125 c i c = 12a; v ge = 15 v v ce = 400 v; r g = r off = 22 ? note 1 inductive load, t j = 25 c i c = 12 a; v ge = 15 v v ce = 400 v; r g = r off = 22 ? note 1. notes: 1. switching times may increase for v ce (clamp) > 0.8 ? v ces , higher t j or increased r g . 2. pulse test, t < 300 s, duty cycle d < 2 % to-247 outline dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc terminals: 1 - gate 2 - drain 3 - source tab - drain 1 2 3 ixys mosfets and igbts are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 6,583,505 of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b1 6,683,344
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